Load lock apparatus, processing system and substrate processing method

ABSTRACT

A load lock apparatus including a carry port provided on a side of a carry-in/out section for carrying a substrate in/out from/to the outside, and a carry port provided on a side of a processing section for processing the substrate, includes: a temperature controlling plate for controlling a temperature of the substrate, the temperature controlling plate configured including a plate body made of a porous material and a temperature controlling gas supply path for supplying a temperature controlling gas controlled in temperature to the plate body. The temperature controlling gas passes through the plate body, blows out from a surface of the plate body, and is supplied to the substrate.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a processing system and a processingmethod each for processing a substrate, and a load lock apparatus usedtherein.

2. Description of the Related Art

In a manufacturing process of, for example, an LCD substrate or thelike, a so-called multi-chamber type processing system is used whichincludes a plurality of substrate processing apparatuses for performingpredetermined processing for the substrate in a reduced-pressureatmosphere, such as etching, ashing, and so on (see Japanese TranslatedNational Publication of Patent Application No. 2004-523880). Such aprocessing system includes a carrier room including a substrate carrierunit for carrying the substrate and a processing section having aplurality of substrate processing apparatuses provided around thecarrier room. The substrate is carried into/out of each of the substrateprocessing apparatuses by a carrier arm of the substrate carrier unit.The processing system includes a carry-in/out section for carrying asubstrate in/out from/to the outside and a load lock apparatus providedbetween the carry-in/out section and the processing section. Thesubstrate carried into the carry-in/out section is carried into theprocessing section via the load lock apparatus, and processed in theprocessing section, and then carried out to the carry-in/out sectionagain via the load lock apparatus.

As the load lock apparatus, there is known one which includes a heatingplate for pre-heating the substrate in the load lock apparatus (seeJapanese Patent Application Laid-open No. 2001-239144-2). Further, aload lock apparatus is proposed which includes a heating plate and acooling plate, so that when the substrate is carried from thecarry-in/out section into the processing section, the substrate can beheated by the heating plate, and when the substrate is carried out ofthe processing section into the carry-in/out section, the substrate canbe cooled by the cooling plate (see Japanese Translated NationalPublication of Patent Application No. 2004-523880).

It is conceivable to configure the heating plate for use in the loadlock apparatus or the like such that, for example, a plate body made ofmetal such as a stainless alloy, an aluminum (Al) alloy or the likeincorporates a heating element such as a sheathed heater or the like sothat the heating element conducts heat to the plate body, and the heatemitted from the heated plate body heats the substrate. It isconceivable to configure the cooling plate such that, for example, aplate body made of metal such as a stainless alloy, an aluminum alloy orthe like incorporates a cooling water conveyance pipe for passing acooling water therethrough so that the cooling water cools the platebody, and the cold heat of the cooled plate body cools the substrate.Further, a method is also proposed which supplies an inert gas such asnitrogen (N₂), helium (He) or the like to the substrate to cool thesubstrate (see Japanese Translated National Publication of PatentApplication No. 2004-523880).

SUMMARY OF THE INVENTION

However, when the plate body of the heating plate is made of a stainlessalloy, the stainless alloy has poor thermal conductivity anddifficulties in uniformly heating the plate body, which may cause unevenheating in the substrate. Consequently, the thermal stress may causedeformation of the substrate and unevenness in substrate processingperformed in the processing section. In addition, metal contaminationmay adhere to the substrate. Further, when the plate body of the heatingplate is made of an aluminum alloy, the plate body has a problem ofinsufficient heat-resistance to high temperatures which allows thesubstrate to be heated only up to about 400° C. at maximum. There isanother problem of poor efficiency of heating only by radiation heat.

On the other hand, when the plate body of the cooling plate is made of astainless alloy, the stainless alloy has poor thermal conductivity anddifficulties in uniformly cooling the plate body, which may also causeuneven cooling in the substrate. Consequently, the thermal stress maycause deformation of the substrate. Further, when gas is supplied to thesubstrate to cool the substrate, it is difficult to uniformly supply thegas to the substrate, which may cause uneven cooling in the substrate.

It is an object of the present invention to make it possible topreferably control the temperature of the substrate in a processingsystem for processing the substrate.

To solve the above problem, the present invention is a load lockapparatus including a carry port provided on a side of a carry-in/outsection for carrying a substrate in/out from/to the outside, and a carryport provided on a side of a processing section for processing thesubstrate, including: a temperature controlling plate for controlling atemperature of the substrate carried in the load lock apparatus, thetemperature controlling plate including a plate body made of a porousmaterial and a temperature controlling gas supply path for supplying atemperature controlling gas controlled in temperature to the plate body,wherein the temperature controlling gas passes through the plate body,blows out from a surface of the plate body, and is supplied to thesubstrate.

Further, the present invention is a load lock apparatus including acarry port provided on a side of a carry-in/out section for carrying asubstrate in/out from/to the outside, and a carry port provided on aside of a processing section for processing the substrate, including: atemperature controlling plate for controlling a temperature of thesubstrate carried in the load lock apparatus, the temperaturecontrolling plate including a plate body made of a porous material, atemperature controller provided in the plate body, and a gas supply pathfor supplying a gas to the plate body, wherein the gas is controlled intemperature when passing through the plate body temperature-controlledby the temperature controller, blows out from a surface of the platebody, and is supplied to the substrate.

According to these load lock apparatuses of the present invention, thetemperature controlling gas can be uniformly supplied from the platebody to the substrate. This can uniformly temperature-control thesubstrate.

In these load lock apparatuses, the porous material is, for example,porous carbon. The porous carbon has excellent thermal conductivity andthus can efficiently temperature-control the substrate. Further, theporous carbon has high heat-resistance even at high temperatures so thatthe substrate can be heated to high temperatures.

Further, in these load lock apparatuses, the surface of the plate bodymay be provided with a permeable protection film.

Further, in these load lock apparatuses, the temperature controllingplate may be capable of being relatively brought close to or away fromthe substrate.

Further, in these load lock apparatuses, the temperature controllingplate may be provided with an electrostatic attraction electrode forelectrostatically attracting the substrate.

Further, these load lock apparatuses may further include: a secondtemperature controlling plate, wherein one of the temperaturecontrolling plate and the second temperature controlling plate may beplaced on a front surface side of the substrate and another may beplaced on a rear surface side of the substrate. This arrangement canheat the substrate more efficiently and uniformly.

Further, the present invention is a substrate processing systemincluding a processing section for processing a substrate; acarry-in/out section for carrying the substrate in/out; and a load locksection provided between the processing section and the carry-in/outsection, wherein the load lock section includes a first load lockapparatus including a carry port provided on a side of the carry-in/outsection for carrying the substrate in/out from/to the outside, and acarry port provided on a side of the processing section for processingthe substrate; and a second load lock apparatus including a carry portprovided on a side of the carry-in/out section for carrying thesubstrate in/out from/to the outside, and a carry port provided on aside of the processing section for processing the substrate, each of thefirst load lock apparatus and the second load lock apparatus including atemperature controlling plate for controlling a temperature of thesubstrate carried in the load lock apparatus, each of the temperaturecontrolling plates of the first load lock apparatus and the second loadlock apparatus including a plate body made of a porous material and atemperature controlling gas supply path for supplying a temperaturecontrolling gas controlled in temperature to the plate body, wherein thetemperature controlling gas passes through the plate body, blows outfrom a surface of the plate body, and is supplied to the substrate.

Further, the present invention is a substrate processing systemincluding a processing section for processing a substrate; acarry-in/out section for carrying the substrate in/out; and a load locksection provided between the processing section and the carry-in/outsection, wherein the load lock section includes a first load lockapparatus including a carry port provided on a side of the carry-in/outsection for carrying the substrate in/out from/to the outside, and acarry port provided on a side of the processing section for processingthe substrate; and a second load lock apparatus including a carry portprovided on a side of the carry-in/out section for carrying thesubstrate in/out from/to the outside, and a carry port provided on aside of the processing section for processing the substrate, each of thefirst load lock apparatus and the second load lock apparatus including atemperature controlling plate for controlling a temperature of thesubstrate carried in the load lock apparatus, the temperaturecontrolling plate of the first load lock apparatus including a platebody made of a porous material and a temperature controlling gas supplypath for supplying a temperature controlling gas controlled intemperature to the plate body, wherein the temperature controlling gaspasses through the plate body, blows out from a surface of the platebody, and is supplied to the substrate, the temperature controllingplate of the second load lock apparatus including a plate body made of aporous material, a temperature controller provided in the plate body,and a gas supply path for supplying a gas to the plate body, wherein thegas is controlled in temperature when passing through the plate bodytemperature-controlled by the temperature controller, blows out from asurface of the plate body, and is supplied to the substrate.

Further, the present invention is a substrate processing systemincluding a processing section for processing a substrate; acarry-in/out section for carrying the substrate in/out; and a load locksection provided between the processing section and the carry-in/outsection, wherein the load lock section includes a first load lockapparatus including a carry port provided on a side of the carry-in/outsection for carrying the substrate in/out from/to the outside, and acarry port provided on a side of the processing section for processingthe substrate; and a second load lock apparatus including a carry portprovided on a side of the carry-in/out section for carrying thesubstrate in/out from/to the outside, and a carry port provided on aside of the processing section for processing the substrate, each of thefirst load lock apparatus and the second load lock apparatus including atemperature controlling plate for controlling a temperature of thesubstrate carried in the load lock apparatus, each of the temperaturecontrolling plates of the first load lock apparatus and the second loadlock apparatus including a plate body made of a porous material, atemperature controller provided in the plate body, and a gas supply pathfor supplying a gas to the plate body, wherein the gas is controlled intemperature when passing through the plate body temperature-controlledby the temperature controller, blows out from a surface of the platebody, and is supplied to the substrate.

In these load lock apparatuses, the load lock section includes the firstload lock apparatus and the second load lock apparatus which may bestacked one on the other.

Further, the present invention is a method of carrying a substrate froma carry-in/out section into a processing section via a load locksection, and processing the substrate in the processing section,including the steps of: opening a carry port provided on thecarry-in/out section side of the load lock section with a carry portprovided on the processing section side of the load lock section keptclosed, and carrying the substrate into the load lock section via thecarry port provided on the carry-in/out section side; closing the carryport provided on the carry-in/out section side, bringing a temperaturecontrolling plate including a plate body made of a porous material closeto a front surface or a rear surface of the substrate, passing atemperature controlling gas controlled in temperature through the platebody, and supplying the gas from the plate body to the substrate tocontrol a temperature of the substrate; and opening the carry portprovided on the processing section side with the carry port provided onthe carry-in/out section side kept closed, and carrying the substrateinto the processing section via the carry port provided on theprocessing section side.

Further, the present invention is a method of carrying a substrate froma carry-in/out section into a processing section via a load locksection, and processing the substrate in the processing section,including the steps of: opening a carry port provided on thecarry-in/out section side of the load lock section with a carry portprovided on the processing section side of the load lock section keptclosed, and carrying the substrate into the load lock section via thecarry port provided on the carry-in/out section side; closing the carryport provided on the carry-in/out section side, bringing a temperaturecontrolling plate including a plate body made of a porous material closeto a front surface or a rear surface of the substrate, controlling atemperature of a temperature controller provided in the plate body,passing a gas through the plate body to control a temperature of the gasby the plate body temperature-controlled by the temperature controller,and supplying the gas controlled in temperature from the plate body tothe substrate to control of a temperature of the substrate; and openingthe carry port provided on the processing section side with the carryport provided on the carry-in/out section side kept closed, and carryingthe substrate into the processing section via the carry port provided onthe processing section side.

In these substrate processing methods, a pressure in the processingsection may be reduced below a pressure in the carry-in/out section,after the substrate is carried into the load lock section, the carryport provided on the carry-in/out section side may be closed to bring aninside of the load lock section into a hermetically closed state; andafter a pressure in the load lock section may be reduced to apredetermined pressure, the carry port provided on the processingsection side may be opened, and the substrate may be carried out of theload lock section to the processing section.

It should be noted that in the present invention, the temperaturecontrolling plate is embodied as a heating plate or a cooling plate.Further, the temperature controller is embodied as a heating element ora cooing water conveyance pipe.

According to the present invention, the plate body of the heating plateis made of a porous material, thereby allowing the temperaturecontrolling gas to pass through the pores in the plate body. Thetemperature controlling gas can uniformly blow out from the surface ofthe plate body so that the temperature controlling gas can be evenlysprayed to the entire front surface or the entire rear surface of thesubstrate. Thus, the front surface or the rear surface of the substratecan be efficiently and uniformly temperature-controlled by thetemperature controlling gas. Further, the temperature controllercontrols the temperature of the plate body while temperature-controllingthe gas passing through the plate body, and the temperature-controlledgas can be sprayed to the substrate to efficiently temperature-controlthe substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic plan view illustrating a configuration of aprocessing system;

FIG. 2 is a schematic side view illustrating the configuration of theprocessing system;

FIG. 3 is a schematic longitudinal sectional view of a load lockapparatus;

FIG. 4 is a longitudinal sectional view of an upper surface heatingplate and a lower surface heating plate;

FIG. 5 is a longitudinal sectional view of an upper surface coolingplate and a lower surface cooling plate;

FIG. 6 is a longitudinal sectional view of an upper surface heatingplate according to another embodiment;

FIG. 7 is a longitudinal sectional view of an upper surface heatingplate according to another embodiment;

FIG. 8 is a longitudinal sectional view of a lower surface heating plateaccording to another embodiment;

FIG. 9 is a longitudinal sectional view of an upper surface coolingplate according to another embodiment;

FIG. 10 is a longitudinal sectional view of an upper surface coolingplate according to another embodiment; and

FIG. 11 is a longitudinal sectional view of a lower surface coolingplate according to another embodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Hereinafter, a first embodiment of the present invention will bedescribed based on a processing system which embodies processes offorming a thin film by plasma CVD (Chemical Vapor Deposition) processingfor a glass substrate G for LCD (Liquid Crystal Display) as an exampleof a substrate. FIG. 1 is a plan view showing a schematic configurationof a processing system 1 according to the embodiment of the presentinvention. The processing system 1 shown in FIG. 1 is a so-calledmulti-chamber type processing system which includes a carry-in/outsection 2 for carrying the substrate G in/out from/to the outside of theprocessing system 1, and a processing section 3 for performing CVDprocessing for the substrate G. A load lock section 5 is arrangedbetween the carry-in/out section 2 and the processing section 3.

In the carry-in/out section 2, a mounting table 11 on which cassettes Ceach housing a plurality of substrates G are mounted and a first carrierunit 12 for carrying the substrate G are provided. On the mounting table11, a plurality of the cassettes C are arranged along an X-axisdirection that is a substantially horizontal direction in FIG. 1. Asshown in FIG. 2, a plurality of substantially rectangular substrates Gin a thin plate shape are housed in each of the cassettes C on themounting table 11 such that they are arranged one above the other, eachin a substantially horizontal position.

The carrier unit 12 is provided at the rear (the right side in FIG. 1)of the mounting table 11 in a Y-axis direction in the horizontaldirection. The carrier unit 12 further includes a rail 13 extendingalong the X-axis direction and a carrier mechanism 14 movable in thehorizontal direction along the rail 13. The carrier mechanism 14includes a carrier arm 15 for holding one substrate G in thesubstantially horizontal direction, and the carrier arm 15 is configuredto be able to expand and contract in a Z-axis direction (the verticaldirection) and rotatable within a substantially horizontal plane. Inother words, the carrier unit 12 is configured such that the carrier arm15 can access an opening 16 provided in the front surface of eachcassette C on the mounting table 11 so as to take and put the substratesG one by one out/into the carrier unit 12. Further, the carrier arm 15can access the load lock section 5 provided on the side (at the rear ofthe carrier unit 12 in the Y-axis direction) opposed to the mountingtable 11 across the carrier unit 12 so as to carry-in and carry-out thesubstrates G one by one to/from the load lock section 5.

As shown in FIG. 2, the load lock section 5 is composed of a pair ofload lock apparatuses, that is, a first load lock apparatus 21 and asecond load lock apparatus 22. The first load lock apparatus 21 and thesecond load lock apparatus 22 are provided stacked one on the other suchthat the second load lock apparatus 22 is stacked on the first load lockapparatus 21 in the illustrated example. Further, a gate valve 25, whichopens/closes a later-described carry-in port 63, of the load lockapparatus 21 is provided on the front side (the left side in FIG. 2) ofthe load lock apparatus 21 in the Y-axis direction, and a gate valve 26,which opens/closes a later-described carry-out port 64, of the load lockapparatus 21 is provided on the rear side of the load lock apparatus 21in the Y-axis direction. A gate valve 27, which opens/closes alater-described carry-in port 103, of the load lock apparatus 22 isprovided on the rear side of the second load lock apparatus 22 in theY-axis direction, and a gate valve 28, which opens/closes alater-described carry-out port 104, of the load lock apparatus 22 isprovided on the front side of the load lock apparatus 22 in the Y-axisdirection. In this configuration, closing the gate valves 25 and 28allows the atmosphere in the carry-in/out section 2 to be shut off fromthe atmospheres in the load lock apparatuses 21 and 22 respectively.Further, closing the gate valves 26 and 27 allows the atmosphere in theprocessing section 3 to be shut off from the atmospheres in the loadlock apparatuses 21 and 22 respectively. The structure of each of theload lock apparatuses 21 and 22 will be described later in detail.

As shown in FIG. 1, the processing section 3 includes a plurality of,for example, five substrate processing apparatuses 30A to 30E eachhousing the substrate G and performing plasma CVD processing for it, anda second carrier unit 31 for carrying the substrate G between load locksection 5 and each of the substrate processing apparatuses 30A to 30E.The second carrier unit 31 is stored in a carrier room 33 provided in achamber 32 having a hermetically closed structure. The chamber 32 isprovided at the rear of the load lock section 5 in the Y-axis direction.Further, the load lock section 5 and the substrate processingapparatuses 30A to 30E are arranged in a manner to surround theperiphery of the chamber 32.

Between the carrier room 33 and the load lock apparatuses 21 and 22, theabove-described gate valves 26 and 27 are provided respectively, so thatthe gate valves 26 and 27 can shut off the atmosphere in the carrierroom 33 from the atmospheres in the load lock apparatuses 21 and 22respectively. Between the carrier room 33 and the substrate processingapparatuses 30A to 30E, gate valves 35 are provided respectively, sothat the gate valves 35 can hermetically closes openings of thesubstrate processing apparatuses 30A to 30E to shut off the atmospherein the carrier room 33 from the atmospheres in the substrate processingapparatuses 30A to 30E respectively. Further, as shown in FIG. 2, anexhaust path 36 is provided for forcibly evacuating the carrier room 33to reduce the pressure therein. At the time of processing in theprocessing system 1, the atmospheres in the carrier room 33 of theprocessing section 3 and the substrate processing apparatuses 30A to 30Eare reduced in pressure to be lower than that in the carry-in/outsection 2, for example, into a vacuum state.

The second carrier unit 31 includes, for example, an articulated carrierarm 51. The carrier arm 51 is configured to be able to substantiallyhorizontally hold one or a plurality of substrates G, and expand andcontract in the Z-axis direction and rotatable within a substantiallyhorizontal plane. Thus, the second carrier unit 31 is configured suchthat the carrier arm 51 can access the load lock apparatuses 21 and 22and the substrate processing apparatuses 30A to 30E via the gate valves26, 27, and 35 so as to carry-in or carry-out the substrates G one byone to/from them.

Next, the configuration of the aforementioned load lock apparatus 21will be described in detail. As shown in FIG. 3, the load lock apparatus21 includes a chamber 61 having a hermetically closed structure. Theinside of the chamber 61 forms a load lock chamber 62 for housing thesubstrate G.

On the carry-in/out section 2 side, that is, on the front side in theY-axis direction of the chamber 61, the carry-in port 63 is provided forcarrying the substrate G into the load lock chamber 62. The carry-inport 63 is provided with the above-described gate valve 25 so that thecarry-in port 63 can be hermetically closed by the gate valve 25. On theprocessing section 3 side, that is, on the rear side in the Y-axisdirection of the chamber 61, the carry-out port 64 is provided forcarrying the substrate G out of the load lock chamber 62. The carry-outport 64 is provided with the above-described gate valve 26 so that thecarry-out port 64 can be hermetically closed by the gate valve 26.

In the load lock chamber 62, a plurality of holding members 70 areprovided for supporting the substrate G. Each of the holding members 70forms a substantially rod shape and is provided in a manner to projectupward from the bottom of the chamber 61 so that the lower surface ofthe substrate G is mounted on the top end portions of the holdingmembers 70, whereby the holding members 70 substantially horizontallysupport the substrate G.

Further, an upper surface heating plate 71 as a first heating plate forheating the substrate G supported on the holding members 70 and a lowersurface heating plate 72 as a second heating plate are provided in theload lock chamber 62.

The upper surface heating plate 71 is placed on the upper surface (forexample, the front surface on which devices are to be formed) side ofthe substrate G supported on the holding members 70, and secured to thechamber 61. As shown in FIG. 4, the upper surface heating plate 71comprises a plate body 75 made of a porous base material withpermeability and a heating gas supply path 76 for supplying a heatinggas flowing through the plate body 75.

The plate body 75 forms a substantially rectangular thick plate, and issubstantially horizontally provided along the ceiling of the chamber 61.Further, the plate body 75 is opposed to the upper surface of thesubstrate G supported on the holding members 70 in a positionsubstantially parallel to the upper surface. The lower surface of theplate body 75 has an area substantially the same as or larger than thatof the upper surface of the substrate G so that it can heat the uppersurface of the substrate G in a manner to cover the entire uppersurface. Furthermore, the plate body 75 is configured such that it isdivided into two, upper and lower, parts and a gap 75 c with asubstantially uniform width and extending in a substantially horizontaldirection is formed between an upper plate 75 a and a lower plate 75 b.An upper surface of the lower plate 75 b facing the gap 75 c is providedwith a plurality of grooves 75 d which are recessed downward in a hollowshape. The grooves 75 d are provided such that they extend, for example,in an X-axis direction at predetermined intervals in a Y-axis directionover the entire upper surface of the lower plate 75 b. Further, to thegap 75 c, a supply pipe 77 is connected which supplies the heating gasheated in an external part of the chamber 61. The supply pipe 77 isprovided in a manner to penetrate through the ceiling portion of thechamber 61 and the upper plate 75 a, and opens on the lower surface ofthe upper plate 75 a toward the gap 75 c. It is preferable to use, asthe heating gas, for example, an inert gas such as N₂ (nitrogen) gas, He(helium) gas or the like. In this embodiment, the heating gas supplypath 76 is constituted of the internal flow passage of the supply pipe77, the gap 75 c, and the grooves 75 d.

The lower surface of the plate body 75 (that is, the lower surface ofthe lower plate 75 b) opposing to the upper surface of the substrate Gsupported on the holding members 70 is covered with a permeableprotection film 81. The permeable protection film 81 is formed on theentire lower surface of the plate body 75 with a substantially uniformthickness. Further, the upper surface of the plate body 75 (that is, theupper surface of the upper plate 75 a) is covered with a non-permeablethin-film protection material 82. The outer side surface of the platebody 75 is also covered with the non-permeable thin-film protectionmaterial 82 extending from the upper plate 75 a to the lower plate 75 b.The peripheral portion of the gap 75 c is also covered with thenon-permeable protection material 82 and is thus closed. The plate body75 is secured to the chamber 61 via the non-permeable protectionmaterial 82. Thus, the permeable protection film 81 and thenon-permeable protection material 82 cover the outer surface of theporous material of the plate body 75 to preferably protect the porousmaterial, thereby preventing the porous material from being damaged.Note that the non-permeable protection material 82 may be provided toextend to a point below the lower surface of the plate body 75 and thepermeable protection film 81. This configuration allows thenon-permeable protection material 82 to surround a portion outside theperipheral portion of the substrate G when the substrate G is heated,thereby preventing the heating gas supplied from the lower surface ofthe plate body 75 from escaping to the outside of the non-permeableprotection material 82 to cause the heating gas to concentrate onto theupper surface of the substrate G as described later. Thus, theefficiency of heating by the heating gas can be improved.

The porous material forming the plate body 75 has a structure in whichmany interconnected pores are formed in a base material so that a fluidcan flow between the pores. Therefore, when the heating gas is suppliedto the heating gas supply path 76, the heating gas can permeate throughthe plate body 75. Since the upper surface and the outer side surface ofthe plate body 75 are covered with the non-permeable protection material82, the heating gas introduced from the supply pipe 77 into the gap 75 cflows toward the lower surface of the plate body 75, passes through thepermeable protection film 81, and blows downward. Thus, the heating gassprayed from the lower surface of the plate body 75 and the heat emittedfrom the plate body 75 heated by the heating gas passing therethroughheat the substrate G. Note that formation of the plurality of groves 75d in the lower plate 75 b provides a structure in which the heating gasin the gap 75 c easily flows from the grooves 75 d into the pores in thelower plate 75 b.

It is preferable to use, as the porous material forming theaforementioned plate body 75, a material with relatively excellentthermal conductivity and thermal emissivity, such as porous carbon (C)or the like. In this case, the plate body 75 can be efficiently heatedand easily heated by the heating gas. Note that the uniformity oftemperature distribution within the plate body 75 can be improved, sothat heat can be evenly emitted from the lower surface of the plate body75, thus preventing uneven heating of the substrate G. Further, highheat-resistance, and stable and sufficient durability even at hightemperatures can be obtained, so that the substrate G can be heated tohigh temperatures. Note that the permeable protection film 81 and thenon-permeable protection material 82 covering the porous material carboncan prevent carbon from being wasted due to oxidation, and particlesfrom adhering to the substrate G. Moreover, the heating gas, if using aninert gas, can prevent carbon from being wasted due to oxidation,resulting in excellent durability. A porous metal, such as a porousaluminum (Al) alloy, a porous nickel (Ni) alloy, or the like may also beused.

It is preferable to use, as the material of the permeable protectionfilm 81, a material with high heat-resistance, a high thermalemissivity, and a coefficient of thermal expansion close to that of theporous material of the plate body 75 and, for example, ceramics such asalumina (Al₂O₃) and the like may be used. This can surely protect theporous material of the plate body 75 even at high temperatures. If amaterial having a high thermal emissivity, for example, alumina is usedas the material of the permeable protection film 81, the permeableprotection film 81 can efficiently emit heat to the substrate G toaccelerate heating of the substrate G. Moreover, the permeableprotection film 81 can evenly emit heat to prevent uneven heating fromoccurring within the substrate G. The permeable protection film 81 mayalso be formed by, for example, thermal spraying. This can preferablyform a permeable film having many pores. Note that when a porousaluminum alloy is used as the porous material of the plate body 75, thepermeable protection film 81 may be formed by subjecting its surface toalumite treatment (oxidation treatment).

As the material of the non-permeable protection material 82, aheat-resistant material, for example, ceramics and the like may be used.This can surely protect the porous material of the plate body 75 even athigh temperatures. Further, it is preferable to use a material with arelatively high heat-insulating property as the material of thenon-permeable protection material 82. This can prevent the heat in theplate body 75 from escaping from the upper surface or the outer sidesurface of the plate body 75, thereby allowing the permeable protectionfilm 81 at the lower surface of the plate body 75 to emit heat in aconcentrated manner. Consequently, the efficiency of heating thesubstrate G can be improved.

As shown in FIG. 3, the lower surface heating plate 72 forms asubstantially rectangular thick plate, and is substantially horizontallyprovided along the bottom of the chamber 61, placed on the lower surface(for example, the rear surface on which no device is to be formed) sideof the substrate G supported on the holding members 70. Theabove-described holding members 70 are arranged within a plurality ofholes 85 formed in the lower surface heating plate 72 respectively. Thelower surface heating plate 72 is opposed to the lower surface of thesubstrate G held on the holding members 70 in a position substantiallyparallel to the lower surface. Note that the upper surface of the lowersurface heating plate 72 has an area substantially the same as or largerthan that of the lower surface of the substrate G so that it can heatthe lower surface of the substrate G in a manner to cover the entirelower surface.

The lower surface heating plate 72 incorporates a heating element 86,such as a sheathed heater or the like. The heating element 86 isconnected to an alternating-current power supply 87 provided outside thechamber 61. More specifically, the power supplied from thealternating-current power supply 87 generates resistance heat of theheating element 86 so that the heat transferred from the heating element86 raises the temperature of the lower surface heating plate 72.

Further, the lower surface heating plate 72 is configured to be able tovertically raised and lowered. For example, as shown in FIG. 3, acylinder 91 is provided below the chamber 61 as a raising and loweringmechanism, and a rod 92 connected to the cylinder 91 is provided in amanner to vertically penetrate the bottom of the chamber 61. The lowersurface heating plate 72 is attached to the upper end portion of the rod92. Driving of the cylinder 91 raises and lowers the rod 92 in theZ-axis direction, whereby the lower surface heating plate 72 is raisedand lowered integrally with the rod 92 with the holes 85 moving alongthe respective holding members 70.

Further, the upper surface of the lower surface heating plate 72 isprovided with a plurality of supporting members 93 for supporting thesubstrate G at the time of heating. When the lower surface heating plate72 is lowered to a waiting position P1, the supporting members 93 arelocated at positions lower than the top end portions of the holdingmembers 70. Therefore, even if the substrate G is held on the holdingmembers 70, the supporting members 93 never touch the substrate G. Onthe other hand, the lower surface heating plate 72 can be raised fromthe waiting position P1 to lift the substrate G held on the holdingmembers 70 by the supporting members 93, so that the substrate G can bebrought close to the above-described upper surface heating plate 71. Inother words, the upper surface heating plate 71 and the lower surfaceheating plate 72 are configured so that they can be respectively broughtclose to and away from the substrate G housed between them. The lowersurface heating plate 72 configured to be raised and lowered asdescribed above makes it possible that at the time of passing thesubstrate G to the holding members 70, the lower surface heating plate72 is lowered to the waiting position P1 to enable easy passing, andthat at the time of heating the substrate G, the lower surface heatingplate 72 is raised to the heating processing position P2 to enableefficient heating of the substrate G.

Further, a gas supply path 94 for supplying an inert gas such as N₂(nitrogen) gas, He (helium) gas or the like into the load lock chamber62 and an exhaust path 95 for forcibly evacuating the load lock chamber62 are connected to the chamber 62. In other words, the gas supply fromthe gas supply path 94 and the forcible evacuation through the exhaustpath 95 enable adjustment of the pressure in the load lock chamber 62.

Next, the configuration of the aforementioned load lock apparatus 22will be described in detail. As shown in FIG. 3, the load lock apparatus22 includes a chamber 101 having a hermetically closed structure. In theillustrated example, the chamber 101 is mounted on the top surface ofthe chamber 61 of the load lock apparatus 21 at the lower tier. Theinside of the chamber 101 forms a load lock chamber 102 for housing thesubstrate G.

On the processing section 3 side, that is, on the rear side in theY-axis direction of the chamber 101, the carry-in port 103 is providedfor carrying the substrate G into the load lock chamber 102. Thecarry-in port 103 is provided with the above-described gate valve 27 sothat the carry-in port 103 can be hermetically closed by the gate valve27. On the carry-in/out section 2 side, that is, on the front side inthe Y-axis direction of the chamber 101, the carry-out port 104 isprovided for carrying the substrate G out of the load lock chamber 102.The carry-out port 104 is provided with the above-described gate valve28 so that the carry-out port 104 can be hermetically closed by the gatevalve 28.

In the load lock chamber 102, a plurality of supporting members 110 areprovided for holding the substrate G. Each of the holding members 110forms a substantially rod shape and is provided in a manner to projectupward from the bottom of the chamber 101 so that the lower surface ofthe substrate G is mounted on the top end portions of the supportingmembers 110, whereby the holding members 110 substantially horizontallysupport the substrate G.

Further, an upper surface cooling plate 111 as a first cooling plate forcooling the substrate G and a lower surface cooling plate 112 as asecond cooling plate are provided in the load lock chamber 102.

As shown in FIG. 5, the upper surface cooling plate 111 is placed on theupper surface (for example, the front surface on which devices are to beformed) side of the substrate G supported on the supporting members 110.The upper surface cooling plate 111 comprises a plate body 115 made of aporous material with permeability, and a cooling gas supply path 116 forsupplying a cooling gas flowing through the plate body 115.

The plate body 115 forms a substantially rectangular thick plate, and issubstantially horizontally provided along the ceiling of the chamber101. Further, the plate body 115 is opposed to the upper surface of thesubstrate G supported on the supporting members 110 in a positionsubstantially parallel to the upper surface. The lower surface of theplate body 115 has an area substantially the same as or larger than thatof the upper surface of the substrate G so that it can cool the uppersurface of the substrate G in a manner to cover the entire uppersurface. Furthermore, the plate body 115 is configured such that it isdivided into two, upper and lower, parts and a gap 115 c with asubstantially uniform width and extending in a substantially horizontaldirection is formed between an upper plate 115 a and a lower plate 115b. An upper surface of the lower plate 115 b facing the gap 115 c isprovided with a plurality of grooves 115 d which are recessed downwardin a hollow shape. The grooves 115 d are provided such that they extend,for example, in the X-axis direction at predetermined intervals in theY-axis direction over the entire upper surface of the lower plate 115 b.Further, to the gap 115 c, a supply pipe 117 is connected which suppliesthe cooling gas cooled in an external part of the chamber 101. Thesupply pipe 117 is provided in a manner to penetrate through, forexample, a later-described rod 126 supporting the upper surface coolingplate 111 and through the upper plate 115 a, and opens on the lowersurface of the upper plate 115 a toward the gap 115 c. It is preferableto use, as the cooling gas, for example, an inert gas such as N₂(nitrogen) gas, He (helium) gas or the like. In this embodiment, thecooling gas supply path 116 is constituted of the internal flow passageof the supply pipe 117, the gap 115 c, and the grooves 115 d.

The lower surface of the plate body 115 (that is, the lower surface ofthe lower plate 115 b) opposing to the upper surface of the substrate Gsupported on the holding members 110 is covered with a permeableprotection film 121. The permeable protection film 121 is formed on theentire lower surface of the plate body 115 with a substantially uniformthickness. Further, the upper surface of the plate body 115 (that is,the upper surface of the upper plate 115 a) is covered with anon-permeable thin-film protection material 122. The outer side surfaceof the plate body 115 is also covered with the non-permeable thin-filmprotection material 122 extending from the upper plate 115 a to thelower plate 115 b. The peripheral portion of the gap 115 c is alsocovered with the non-permeable protection material 122 and is thusclosed. The plate body 115 is secured to the chamber 101 via thenon-permeable protection material 122. Thus, the permeable protectionfilm 121 and the non-permeable protection material 122 cover the outersurface of the porous material of the plate body 115 to preferablyprotect the porous material, thereby preventing the porous material frombeing damaged. Note that the non-permeable protection material 122 maybe provided to extend to a point below the lower surface of the platebody 115 and the permeable protection film 121. This configurationallows the non-permeable protection material 122 to surround a portionoutside the peripheral portion of the substrate G when the substrate Gis cooled, thereby preventing the cooling gas supplied from the lowersurface of the plate body 115 from escaping to the outside of thenon-permeable protection material 122 to cause the cooling gas toconcentrate onto the upper surface of the substrate G as describedlater. Thus, the efficiency of cooling by the cooling gas can beimproved.

The porous material forming the plate body 115 has a structure in whichmany interconnected pores are formed in a base material so that a fluidcan flow between the pores. Therefore, when the cooling gas is suppliedto the cooling gas supply path 116, the cooling gas can permeate throughthe plate body 115. Since the upper surface and the outer side surfaceof the plate body 115 are covered with the non-permeable protectionmaterial 122, the cooling gas introduced from the supply pipe 117 intothe gap 115 c flows toward the lower surface of the plate body 115,passes through the permeable protection film 121, and blows downward.Thus, the cooling gas sprayed from the lower surface of the plate body115 and the cold heat of the plate body 115 cooled by the cooling gaspassing therethrough cool the substrate G. Note that formation of theplurality of groves 115 d in the lower plate 115 b provides a structurein which the cooling gas in the gap 115 c easily flows from the grooves115 d into the pores in the lower plate 115 b.

As the porous material forming the aforementioned plate body 115, amaterial may be used which has relatively excellent thermal conductivityand thermal emissivity, for example, a porous metal such as a porousaluminum alloy or the like. Further, a porous nickel alloy, porouscarbon or the like may be used. The use of such porous material withexcellent thermal conductivity can efficiently cool the plate body 115and the cooling gas can easily cool the plate body 115. Moreover, theuniformity of temperature distribution within the plate body 115 can beimproved, so that cold heat can be evenly supplied from the lowersurface of the plate body 115, thus preventing uneven cooling of thesubstrate G.

It is preferable to use, as the material of the permeable protectionfilm 121, a material with a high thermal emissivity and a coefficient ofthermal expansion close to that of the porous material of the plate body115 and, for example, ceramics such as alumina (Al₂O₃) and the like maybe used. This can surely protect the porous material of the plate body115. The permeable protection film 121 may also be formed by, forexample, thermal spraying. This can preferably form a permeable filmhaving many pores. Note that when a porous aluminum alloy is used as theporous material of the plate body 115, the permeable protection film 121may be formed by subjecting its surface to alumite treatment (oxidationtreatment).

As the material of the non-permeable protection material 122, forexample, ceramics and the like may be used. This can surely protect theporous material of the plate body 115. Further, it is preferable to usea material with a relatively high heat-insulating property as thematerial of the non-permeable protection material 122. This can preventthe cold heat in the plate body 115 from escaping from the upper surfaceof the outer side surface of the plate body 115, thereby allowing thepermeable protection film 121 at the lower surface of the plate body 115to be cooled in a concentrated manner. Consequently, the efficiency ofcooling the substrate G can be improved.

The upper surface cooling plate 111 is configured to be able tovertically raised and lowered so that it can approach and separate fromthe substrate G supported on the supporting members 110. For example, asshown in FIG. 3, a cylinder 125 is provided above the chamber 101 as araising and lowering mechanism, and a rod 126 connected to the cylinder125 is provided in a manner to vertically penetrate the ceiling of thechamber 101. The upper surface cooling plate 111 is attached to thelower end portion of the rod 126. Driving of the cylinder 125 raises andlowers the rod 126 in the Z-axis direction, whereby the upper surfacecooling plate 111 is raised and lowered integrally with the rod 126. Theupper surface cooling plate 111 moves, for example, to a waitingposition P3 at an upper position away from the substrate G supported onthe supporting members 110 and to a cooling processing position P4 at alower position close to the substrate G. The upper surface cooling plate111 configured to be raised and lowered in the above manner makes itpossible that at the time of passing the substrate G to the supportingmembers 110, the upper surface cooling plate 111 is raised to thewaiting position P3 to enable easy passing, and that at the time ofcooling the substrate G, the upper surface cooling plate 111 is loweredto the cooling processing position P4 to enable efficient cooling of thesubstrate G. Note that the upper surface cooling plate 111 employs aporous material and is therefore lightweight so that it can be easilyraised and lowered by a small driving force.

The lower surface cooling plate 112 forms a substantially rectangularthick plate, and is substantially horizontally provided along the bottomof the chamber 101, placed on the lower surface (for example, the rearsurface on which no device is to be formed) side of the substrate Gsupported on the supporting members 110, and secured to the chamber 101.The above-described supporting members 110 are arranged within aplurality of holes 128 formed in the lower surface cooling plate 112respectively. The lower surface cooling plate 112 is opposed to thelower surface of the substrate G supported on the holding members 110 ina position substantially parallel to the lower surface. The uppersurface of the lower surface cooling plate 112 has an area substantiallythe same as or larger than that of the lower surface of the substrate Gso that it can cool the lower surface of the substrate G in a manner tocover the entire lower surface.

The lower surface cooling plate 112 incorporates a cooling waterconveyance pipe 130 for passing a cooling water therethrough. Thecooling water conveyance pipe 130 is connected to a not-shown coolingwater supply source provided outside the chamber 101. The cooling wateris supplied from the cooling water supply source, circulates in thecooling water conveyance pipe 130 in the lower surface cooling plate 112to cool the lower surface cooling plate 112, and is recovered in anexternal part of the lower surface cooling plate 112.

Further, a gas supply path 131 for supplying an inert gas such as N₂(nitrogen) gas, He (helium) gas or the like into the load lock chamber102 and an exhaust path 132 for forcibly evacuating the load lockchamber 102 are connected to the chamber 102. In other words, the gassupply from the gas supply path 131 and the forcible evacuation throughthe exhaust path 132 enable adjustment of the pressure in the load lockchamber 102.

Next, a process of processing the substrate G in the processing system 1configured as described above will be described. The cassette C housinga plurality of substrates G is first mounted on the mounting table 11with its opening 16 directed to the carrier unit 12 side. The carrierarm 15 of the carrier unit 12 is then caused to enter the opening 16 totake one substrate G. The carrier arm 15 holding the substrate G ismoved to a position opposed to the front of the gate valve 25 of theload lock apparatus 21 located at the lower tier.

On the other hand, in the load lock apparatus 21, the carry-in port 63and the carry-out port 64 are hermetically closed by the gate valves 25and 26 respectively so that the load lock chamber 62 is hermeticallyclosed. In the load lock apparatus 22, the carry-in port 103 and thecarry-out port 104 are closed by the gate valves 27 and 28 respectivelyso that the load lock chamber 102 is hermetically closed. Accordingly,the atmosphere in the carry-in/out section 2 and the atmosphere in thecarrier room 33 in the processing section 3 are shut off from each othervia the load lock apparatuses 21 and 22. The atmosphere in thecarry-in/out section 2 is, for example, at the atmospheric pressure,though the carrier room 33 is evacuated.

In the load lock apparatus 21, the pressure in the load lock apparatus21 is maintained at the substantially atmospheric pressure almost equalto that in the carry-in/out section 2, and the carry-in port 63 is thenopened by opening the gate valve 25 with the carry-out port 64 keptclosed by the gate valve 26. Even during the carry-in port 63 kept open,the vacuum state in the carrier room 33 can be maintained by keeping thecarry-out port 64 closed by the gate valve 26. Further, the lowersurface heating plate 72 is lowered at the waiting position P1 inadvance. In this state, the carrier arm 15 holding the substrate G ismoved to enter the load lock chamber 62 via the carry-in port 63 to passthe substrate G onto the holding members 70.

After the substrate G is carried in via the carry-in port 63 and thecarrier arm 15 retracts from the load lock chamber 62 as describedabove, the gate valve 25 is closed to bring the load lock chamber 62into a hermetically closed state, and then the load lock chamber 62 isforcibly evacuated through the exhaust path 95, whereby the pressure inthe load lock chamber 62 is reduced to a predetermined pressure for avacuum state, that is, almost equal to the pressure in the carrier room33.

On the other hand, the substrate G is heated from both surfaces by theupper surface heating plate 71 and the lower surface heating plate 72.The lower surface heating plate 72 is first raised from the waitingposition P1. Then, at a midpoint of raising of the lower surface heatingplate 72, the substrate G is lifted by the supporting members 93 fromthe holding members 70 and kept supported on the supporting members 93.The substrate G mounted and substantially horizontally supported on topends of the supporting members 93 is raised integrally with the lowersurface heating plate 72 and is brought close to the upper surfaceheating plate 71. This results in a state where the lower surfaceheating plate 72 is located at the heating processing position P2 sothat the lower surface of the upper surface heating plate 71 is broughtclose to the entire upper surface of the substrate G and the uppersurface of the lower surface heating plate 72 is brought close to theentire lower surface of the substrate G. Between the lower surface ofthe substrate G and the upper surface of the lower surface heating plate72 and between the upper surface of the substrate G and the lowersurface of the upper surface heating plate 71, clearances withrespective substantially uniform widths are formed. Moreover, the lowerperipheral portion of the non-permeable protection material 82 providedin a matter to project from the lower surface peripheral portion of theupper surface heating plate 71 is placed such that the lower peripheralportion is close to the upper surface peripheral portion of the lowersurface heating plate 72 so as to surround the substrate G as shown inFIG. 4.

The upper surface of the lower surface heating plate 72 is uniformlyraised in temperature by heat transfer from the heating element 86, sothat the lower surface of the substrate G is uniformly heated byradiation heat from the upper surface of the lower surface heating plate72. On the other hand, in the upper surface heating plate 71, theheating gas is supplied to the gap 75 c from the supply pipe 77. Theheating gas introduced into the gap 75 c flows into the pores in thelower plate 75 b. The gas then flows, diffusing into the lower plate 75b, toward the lower surface, passes through the pores in the permeableprotection film 81, and blows downward from the permeable protectionfilm 81 for discharge toward the upper surface of the substrate G. Thus,the heating gas comes into contact with the substrate G to heat thesubstrate G efficiently. The heating gas supplied from the plate body 75onto the upper surface of the substrate G flows along the upper surfaceof the substrate G to the peripheral portion side of the substrate G,and flows out through the gap between the lower peripheral portion ofthe non-permeable protection material 82 and the upper surfaceperipheral portion of the lower surface heating plate 72, and isexhausted through the exhaust path 95.

Note that the heating gas introduced into the gap 75 c from the supplypipe 77 diffuses to the entire gap 75 a which extends to be larger thanthe area of the substrate G, and evenly permeates from the gap 75 c intothe entire upper surface of the lower plate 75 b. When permeating fromthe gap 75 c into the lower plate 75 b, the gas easily evenly flows intothe lower plate 75 b via the plurality of grooves 75 d formed in thelower plate 75 b respectively. Accordingly, the heating gas evenlypasses through the entire lower plate 75 b and blows out in an equalflow rate from all the pores in the lower surface of the permeableprotection film 81, whereby the heating gas can evenly heat the entireupper surface of the substrate G. Moreover, the above-described heatinggas in the gap 75 c also permeates and diffuses into the upper plate 75a to raise the temperature of the entire plate body 75. The substrate Gis also heated by the radiation heat from the heated plate body 75. Asdescribed above, the heating gas evenly passing through the entire lowerplate 75 b evenly heats the entire lower plate 75 b. Accordingly, thelower surface of the plate body 75 evenly emits radiation heat so thatthe substrate G can also be uniformly heated by the radiation heat.Furthermore, the lower peripheral portion of the non-permeableprotection material 82 is placed around the substrate G so that theheating gas and the radiation heat can be supplied to the upper surfaceof the substrate G in a concentrated manner. This enables furtherefficient heating of the substrate G. Further, the lower peripheralportion of the non-permeable protection material 82 can prevent thesubstrate G from moving off from the space between the upper surfaceheating plate 71 and the lower surface heating plate 72.

By heating the substrate G from both surfaces as described above, thesubstrate G can be uniformly heated and can be also efficiently heatedin a short time. It should be noted that if the heating plate is broughtclose only to one surface of the substrate G to heat the substrate Gonly from the one surface, there will occur a temperature differencebetween the surface on the side to be heated and the surface on theopposite side, which difference may present a concern that the thermalstress causes the substrate G to get warped. In contrast, heating thesubstrate G from both the surfaces can prevent occurrence of thetemperature difference in the substrate G to prevent warpage of thesubstrate G.

After the heating of the substrate G is finished and the load lockchamber 62 is brought into an almost vacuum state, the carry-out port 64is opened by opening the gate valve 26 with the carry-in port 63 keptclosed by the gate valve 25. Even during the carry-out port 64 keptopen, the vacuum state in the load lock chamber 62 and the carrier room33 can be maintained by keeping the carry-in port 63 closed by the gatevalve 25. Further, the lower surface heating plate 72 is lowered andreturned to the waiting position P1. Then, at a midpoint of lowering ofthe lower surface heating plate 72, the holding members 70 butts againstthe lower surface of the substrate G so that the substrate G is passedfrom the supporting members 93 onto the holding members 70, resulting ina state in which the substrate G is separated from the upper surfaceheating plate 71 and the lower surface heating plate 72. In this state,the carrier arm 51 of the second carrier unit 31 is moved to enter theload lock chamber 62 via the carry-out port 64. The carrier arm 51 thenreceives the substrate G from the holding members 70, and the carrierarm 51 holding the substrate G retracts from the load lock chamber 62.Thus, the substrate G is carried out of the load lock chamber 62 via thecarry-out port 64 and carried into the carrier room 33 in the processingsection 3.

The substrate G carried into the carrier room 33 is carried by thecarrier arm 51 from the carrier room 33 into any of the substrateprocessing apparatuses 30A to 30E where the substrate G is subjected tofilm formation by the predetermined plasma CVD processing. In the one ofthe substrate processing apparatuses 30A to 30E, the substrate G isheated in a reduced pressure atmosphere, and a reaction gas is suppliedinto the processing chamber and made into plasma by energy of microwave.This forms a predetermined thin film on the surface of the substrate G.Since the carried-in substrate G has been pre-heated in the load lockchamber 62, the heating time of the substrate G in the one of thesubstrate processing apparatuses 30A to 30E can be reduced, resulting inefficient processing.

After completion of the processing of the substrate G in the one of thesubstrate processing apparatuses 30A to 30E, the carrier arm 51 takesthe substrate G out of the one of the substrate processing apparatuses30A to 30E and carries it out to the carrier room 33. At this time, thesubstrate G is at a high temperature.

On the other hand, in the load lock apparatus 22, the carry-in port 103and the carry-out port 104 are hermetically sealed by the gate valves 27and 28 in the closed state so that the load lock chamber 102 is kepthermetically closed. Further, the load lock chamber 102 is forciblyevacuated through the exhaust path 132, so that the pressure in the loadlock chamber 102 is reduced to a predetermined pressure for a vacuumstate, that is, almost equal to the pressure in the carrier room 33 inadvance. In this state, the carry-in port 103 is opened by opening thegate valve 27 with the carry-out port 104 kept closed by the gate valve28. Even during the carry-in port 103 kept open, the vacuum state in theload lock chamber 102 and the carrier room 33 can be maintained bykeeping the carry-out port 104 closed by the gate valve 28. Further, theupper surface cooling plate 111 is kept waiting at the waiting positionP3 in advance. The carrier arm 51 holding the substrate G enters theload lock chamber 102 via the carry-in port 103 so that the substrate Gis then passed from the carrier arm 51 onto the supporting members 110.

After the substrate G is carried in via the carry-in port 103 and thecarrier arm 51 retracts from the load lock chamber 102, the gate valve27 is closed to bring the load lock chamber 102 into a hermeticallyclosed state. The inert gas is then supplied from the gas supply path131 into the load lock chamber 102 to increase the pressure in the loadlock chamber 102 until the pressure in the load lock apparatus 22 isbrought to a predetermined pressure, that is, a substantiallyatmospheric pressure almost equal to the pressure in the carry-in/outsection 2.

On the other hand, the substrate G is cooled from both surfaces by theupper surface cooling plate 111 and the lower surface cooling plate 112.At the time of cooling, the upper surface cooling plate 111 is loweredto the cooling processing position P4. This results in a state where thelower surface of the upper surface cooling plate 111 is brought close tothe entire upper surface of the substrate G, and the upper surface ofthe lower surface cooling plate 112 is brought close to the entire lowersurface of the substrate G. Between the upper surface cooling plate 111and the substrate G and between the lower surface cooling plate 112 andthe substrate G, clearances with respective substantially uniform widthsare formed. The lower peripheral portion of the non-permeable protectionmaterial 122 provided in a matter to project from the lower surfaceperipheral portion of the upper surface cooling plate 111 is placed suchthat the lower peripheral portion is close to the upper surfaceperipheral portion of the lower surface cooling plate 112 so as tosurround the substrate G as shown in FIG. 5.

The upper surface of the lower surface cooling plate 112 is uniformlycooled by cold heat of the cooling water passing through the coolingwater conveyance pipe 130, so that the lower surface of the substrate Gis uniformly cooled by cold heat of the upper surface of the lowersurface cooling plate 112. On the other hand, in the upper surfacecooling plate 111, the cooling gas is supplied to the gap 115 c from thesupply pipe 117. The cooling gas introduced into the gap 115 c flowsinto the pores in the lower plate 115 b. The gas then flows, diffusinginto the lower plate 115 b, toward the lower surface, passes through thepermeable protection film 121, and blows downward from the permeableprotection film 121 for discharge toward the upper surface of thesubstrate G. Thus, the cooling gas comes into contact with the substrateG to cool the substrate G efficiently. The cooling gas supplied from theplate body 115 onto the upper surface of the substrate G flows along theupper surface of the substrate G to the peripheral portion side of thesubstrate G, and flows out through the gap between the lower peripheralportion of the non-permeable protection material 122 and the uppersurface peripheral portion of the lower surface cooling plate 112 and isexhausted through the exhaust path 132.

Note that the cooling gas introduced into the gap 115 c from the supplypipe 117 diffuses to the entire gap 115 a which extends to be largerthan the area of the substrate G, and evenly permeates from the gap 115c into the entire upper surface of the lower plate 115 b. Whenpermeating from the gap 115 c into the lower plate 115 b, the gas easilyevenly flows into the lower plate 115 b via the plurality of grooves 115d formed in the lower plate 115 b respectively. Accordingly, the coolinggas evenly passes through the entire lower plate 115 b and blows out inan equal flow rate from all the pores in the lower surface of thepermeable protection film 121, whereby the cooling gas can evenly coolthe entire upper surface of the substrate G. Moreover, theabove-described cooling gas in the gap 115 c also permeates and diffusesinto the upper plate 115 a to cool the entire plate body 115. Thesubstrate G is also cooled by the cold heat from the cooled plate body115. As described above, the cooling gas evenly passing through theentire lower plate 115 b evenly cools the entire lower plate 115 b.Accordingly, the substrate G can also be uniformly cooled by the coldheat of the plate body 115. Furthermore, the lower peripheral portion ofthe non-permeable protection material 122 is placed around the substrateG so that the cooling gas and the cold heat can be supplied to the uppersurface of the substrate G in a concentrated manner. This enablesfurther efficient cooling of the substrate G. Further, the lowerperipheral portion of the non-permeable protection material 122 canprevent the substrate G from moving off from the space between the uppersurface cooling plate 111 and the lower surface cooling plate 112.

By cooling the substrate G from both surfaces as described above by theupper surface cooling plate 111 and the lower surface cooling plate 112,the substrate G can be uniformly cooled and can be also efficientlycooled in a short time. It should be noted that if the cooling plate isbrought close only to one surface of the substrate G to cool thesubstrate G only from the one surface, there will occur a temperaturedifference between the surface on the side to be cooled and the surfaceon the opposite side, which difference may present a concern that thethermal stress causes the substrate G to get warped. In contrast, evenlycooling the substrate G from both the surfaces can prevent occurrence ofthe temperature difference in the substrate G to prevent warpage of thesubstrate G.

After the cooling of the substrate G is finished and the load lockchamber 102 is brought into an almost atmospheric pressure state, thecarry-out port 104 is opened by opening the gate valve 28 with thecarry-in port 103 kept closed by the gate valve 27. Even during thecarry-out port 104 kept open, the vacuum state in the carrier room 33can be maintained by keeping the carry-in port 103 closed by the gatevalve 27. The upper surface cooling plate 111 is returned to the waitingposition P3. Further, the carrier arm 15 of the carrier unit 12 entersthe load lock chamber 102 via the carry-out port 104, so that thecarrier arm 15 then receives the substrate G from the holding members110, and the carrier arm 15 holding the substrate G retracts from theload lock chamber 102. Thus, the substrate G is carried out of the loadlock chamber 102 via the carry-out port 104 into the carry-in/outsection 2, and then returned by the carrier arm 15 to the cassette C onthe mounting table 11. In the above manner, a series of processingprocesses in the processing system 1 is finished.

According to the processing system 1, the plate body 75 of the uppersurface heating plate 71 is made of a porous material, thereby making itpossible for the heating gas to pass through the pores in the plate body75. It is possible to cause the heating gas to blow out uniformly fromthe surface of the plate body 75 so that the heating gas is sprayedevenly to the entire surface of the substrate G. Therefore, the heatinggas can efficiently and uniformly heat the substrate G to preferablycontrol the temperature of the substrate G. Uniformly pre-heating thesubstrate G can prevent warpage deformation of the substrate G andprevent uneven processing in the substrate processing apparatuses 30A to30E. The use of the lightweight porous material for the upper surfaceheating plate 71 can reduce the weight of the apparatus.

Further, the plate body 115 of the upper surface cooling plate 111 ismade of a porous material, thereby making it possible for the coolinggas to pass through the pores in the plate body 115. It is possible tocause the cooling gas to blow out uniformly from the surface of theplate body 115 so that the cooling gas is sprayed evenly to the entiresurface of the substrate G. Therefore, the heating gas can efficientlyand uniformly cool the substrate G to preferably control the temperatureof the substrate G. Uniformly cooling the substrate G can preventwarpage deformation of the substrate G. The use of the lightweightporous material for the upper surface cooling plate 111 can reduce theweight of the apparatus.

A preferred embodiment of the present invention has been describedabove, but the present invention is not limited to the embodiment. Itshould be understood that various changes and modifications are readilyapparent to those skilled in the art within the scope of the technicalspirit as set forth in claims, and those should also be covered by thetechnical scope of the present invention.

Although one load lock apparatus 21 for heating is provided in theabove-described embodiment, two or more load lock apparatuses 21 may beprovided. Further, although one load lock apparatus 22 for cooling isprovided, two or more load lock apparatuses 22 may be provided. Further,the load lock apparatus 21 for heating and the load lock apparatuses 22for cooling are not limited to those stacked one on the other, but theymay be laterally arranged, for example, side by side, or may be providedat positions away from each other.

Although in the load lock apparatus 21 illustrated in the embodiment,the upper surface heating plate 71 is configured such that the heatinggas is supplied from the supply pipe 77 to the gap 75 c provided insidethe plate body 75, the form of the heating gas supply path 76 is notlimited to that configuration. For example, a gap 140 may be providedbetween the upper surface of the plate body 75 and the non-permeableprotection material 82 as shown in FIG. 6, so that the heating gas maybe supplied from the supply pipe 77 into the gap 140 to flow downward inthe entire plate body 75.

Although the pre-heated heating gas is supplied to the upper surfaceheating plate 71 so that the plate body 75 and the substrate G areheated by the heating gas in the above embodiment, a heating elementsuch as a sheathed heater or the like may be provided in the plate body75 so that the plate body 75 and the gas passing through the plate body75 can be heated by the heating element as shown in FIG. 7. In theexample shown in FIG. 7, a heating element 150 is formed in a thin lineand provided along and in the plurality of grooves 75 d of the platebody 75. To the heating element 150, an alternating-current power supply151 provided outside the chamber 61 is connected so that the electricpower supplied from the alternating-current power supply 151 generatesresistance heat. Further, from the supply pipe 77, for example, an inertgas such as N₂ (nitrogen) gas, He (helium) gas or the like is supplied.In other words, a gas supply path 152 is constituted of the supply pipe77 and the gap 75 c.

In the above configuration, the plate body 75 is heated by the heattransferred from the heating element 150. The gas supplied from the gassupply path 152, when flowing into the lower plate 75 b of the platebody 75, is heated by the heating element 150, and is further heated bythe heat of the plate body 75 during passage through the plate body 75.Thus, the gas heated by the heating element 150 and the plate body 75blows out from the surface of the plate body 75 and is supplied to thefront surface or the rear surface of the substrate G. Accordingly, evenif the gas is not pre-heated, the gas can be sufficiently heated by theheating element 150 and the plate body 75, so that the sufficientlyheated gas can be sprayed to the substrate G. Further, since the heat ofthe heating element 150 is conducted to the inside of the plate body 75by the gas when the gas passes through the plate body 75, the flow ofthe gas accelerates the heating of the plate body 75. The gas uniformlyflowing through the plate body 75 improves the uniformity in temperaturedistribution of the plate body 75. Accordingly, the lower surface of theplate body 75 can be efficiently and uniformly heated, whereby theradiation heat from the lower surface of the plate body 75 is uniformlyemitted. Accordingly, the substrate G can be efficiently and uniformlyheated.

Although the lower surface heating plate 72 is configured such that itcan be raised and lowered and receives the substrate G from the holdingmembers 70 through use of the supporting members 93 on the lower surfaceheating plate 72 in the above embodiment, the lower surface heatingplate 72 may be configured not to receive the substrate G but to be onlybrought close to the substrate G supported on the holding members 70 (inthis case, serving as the supporting members for supporting thesubstrate at time of heating). Further, the upper surface heating plate71 may be configured such that it can be raised and lowered, so thatmovement of raising and lowering of the upper surface heating plate 71itself can bring the upper surface heating plate 71 close to and awayfrom the substrate G. The upper surface heating plate 71 employs theporous material and is thus lightweight so that it can be easily raisedand lowered by a small driving force. Further, although the uppersurface heating plate 71 and the lower surface heating plate 72 areconfigured to heat the substrate G with the plates 71 and 72 kept closeto the substrate G with clearances intervening between the plates 71 and72 and the substrate G respectively in the above-described embodiment,the upper surface heating plate 71 and the lower surface heating plate72 may heat the substrate G with the plate 71 or 72 keeping in touchwith the substrate G.

Although the upper surface heating plate 71 has the plate body 75 madeof a porous material and a configuration to blow the heating gas in theabove embodiment, the lower surface heating plate 72, in place of theupper surface heating plate 71, may have a plate body made of a porousmaterial and a configuration to blow the heating gas. This allows theheating gas to be uniformly sprayed to the rear surface of the substrateG to heat efficiently and uniformly the rear surface of the substrate G.Further, both of the upper surface heating plate 71 and the lowersurface heating plate 72 may have a plate body made of a porous materialand a configuration to blow the heating gas.

Furthermore, an electrostatic attraction electrode may be provided onthe surface of the upper surface heating plate 71 or the lower surfaceheating plate 72 to electrostatically attract the substrate G. FIG. 8shows an example where the lower surface heating plate having aconfiguration to blow the heating gas includes an electrostaticattraction electrode. In FIG. 8, a lower surface heating plate 160comprises a permeable plate body 161 made of a porous material and aheating gas supply path 162 for supplying the heating gas to the platebody 161. The plate body 161 is configured, similarly to the plate body75, such that a gap 161 c with a substantially uniform width andextending in a substantially horizontal direction is formed between anupper plate 161 a and a lower plate 161 b. The lower surface of theupper plate 161 a is provided with a plurality of grooves 161 d whichare recessed upward in a hollow shape. The heating gas supply path 162is constituted of the internal flow passage of a supply pipe 163connected to the gap 161 c, the gap 161 c, and the grooves 161 d. Theupper surface of the plate body 161 is formed with a permeableprotection film 171, and the lower surface and the outer side surface ofthe plate body 161 are covered with a non-permeable protection material172. Further, the permeable protection film 171 incorporates anelectrostatic attraction electrode 173 made of a conductor in a thinlayer shape. The electrostatic attraction electrode 173 is permeable andis entirely covered with the permeable protection film 171 forprotection. As the material of the permeable protection film 171 in thiscase, an insulating material is used, for example, ceramics such asalumina and the like. The electrostatic attraction electrode 173 is alsoconnected to a direct-current power supply 175 provided outside thechamber 61. Note that the electrostatic attraction electrode 173 mayalso be formed by thermal spraying. For example, thermal spraying can beperformed onto the surface of the plate body 161 in the order of thepermeable protection film 171, the electrostatic attraction electrode173, and the permeable protection film 171 into a layered form. Theholding members 70 are respectively arranged within a plurality of holes176 formed in the lower surface heating plate 160 in a manner tovertically penetrate it, so that the lower surface heating plate 160 canbe raised and lowered with the holes 176 moving along the respectiveholding members 70.

In this configuration, the substrate G is attracted to the surface ofthe permeable protection film 171 by an electrostatic force generated onthe surface of the permeable protection film 171 on the upper surface ofthe lower surface heating plate 160. Accordingly, the substrate G issurely held in a state in which the substrate G is in close contact withthe lower surface heating plate 160. Note that at the time of receivingthe substrate G, the lower surface heating plate 160 is first lowered tothe waiting position, the lower surface heating plate 160 is raisedafter the substrate G is passed onto the holding members 70 so that thelower surface heating plate 160 lifts the substrate G from the holdingmembers 70 and electrostatically attracts the substrate G. On the otherhand, the heating gas is supplied to the entire lower surface of theelectrostatically attracted substrate G after passing through the platebody 161, the permeable protection film 171, the electrostaticattraction electrode 173, and the permeable protection film 171 inorder. This can heat the substrate G efficiently and uniformly. Notethat the lower surface heating plate 160 may be configured, similarly tothe upper surface heating plate 71, such that a heating element isprovided in the plate body 161 so that the plate body 161 and the gaspassing through the plate body 161 can be heated by the heating element.

Besides, although the upper surface cooling plate 111 is configured suchthat the cooling gas is supplied into the gap 115 c provided in theplate body 115 from the supply pipe 117 in the load lock apparatus 22illustrated in the above embodiment, the cooling gas supply path 116 isnot limited to that configuration. For example, a gap 170 may beprovided between the upper surface of the plate body 115 and thenon-permeable protection material 122 as shown in FIG. 9, so that thecooling gas may be supplied from the supply pipe 117 into the gap 170 toflow downward in the entire plate body 115.

Although the pre-cooled cooling gas is supplied to the upper surfacecooling plate 111 so that the plate body 115 and the substrate G arecooled by the cooling gas in the above embodiment, for example, acooling water conveyance path for conveying a cooling water may beprovided in the plate body 115 as shown in FIG. 10 so that the platebody 115 and the gas passing through the plate body 115 can be cooled bythe cooling water conveyance pipe. In the example shown in FIG. 10, acooling water conveyance pipe 180 is formed in the shape of a thin tubeand provided along and in the plurality of grooves 115 d of the platebody 115. Further, the cooling water conveyance pipe 180 is connected toa not-shown cooling water supply source provided outside the chamber101. On the other hand, an inert gas such as N₂ gas, He gas or the likeis supplied from the supply pipe 117. In other words, a gas supply path181 is constituted of the supply pipe 117 and the gap 115 c.

In the above configuration, the plate body 115 is cooled by the coldheat of the cooling water passing through the cooling water conveyancepipe 180. The gas supplied from the gas supply path 181, when flowinginto the lower plate 115 b of the plate body 115, is cooled by thecooling water conveyance pipe 180, and further cooled by the cold heatof the plate body 115 during passage through the plate body 115. Thus,the gas cooled by the cooling water conveyance pipe 180 and the platebody 115 blows out from the surface of the plate body 115 and issupplied to the front surface or the rear surface of the substrate G.Accordingly, even if the gas is not pre-cooled, the gas can besufficiently cooled by the cooling water conveyance pipe 180 and theplate body 115, so that the sufficiently cooled gas can be sprayed tothe substrate G. Further, since the cold heat of the cooling waterconveyance pipe 180 is conveyed into the entire plate body 115 by thegas when the gas passes through the plate body 115, the flow of the gasaccelerates the cooling of the plate body 115. The gas uniformly flowingthrough the plate body 115 improves the uniformity in temperaturedistribution of the plate body 115. Accordingly, the lower surface ofthe plate body 115 is efficiently and uniformly cooled, whereby the coldheat is supplied from the lower surface of the plate body 115.Accordingly, the substrate G can be efficiently and uniformly cooled.

Although the upper surface cooling plate 111 is configured such that itcan be raised and lowered with respect to the chamber 101 so as to bebrought close to and away from the substrate G and the lower surfacecooling plate 112 is secured to the chamber 101, the lower surfacecooling plate 112 may be configured, as a matter of course, such that itcan also be brought close to and away from the substrate G. Further, thelower surface cooling plate 112 may be configured such that supportingmembers for supporting the substrate G are provided on the upper surfaceof the lower surface cooling plate 112, for example, similarly to thelower surface heating plate 72 in the load lock apparatus 21, to receivethe substrate G from the supporting members 110 at the time of coolingthe substrate G. In this case, the upper surface cooling plate 111 andthe lower surface cooling plate 112 can be configured such that they canbe relatively brought close to and away from the substrate G housedbetween them respectively. Further, although the upper surface coolingplate 111 and the lower surface cooling plate 112 are configured to coolthe substrate G with the plates 111 and 112 kept close to the substrateG with clearances intervening between the plates 111 and 112 and thesubstrate G respectively in the above embodiment, the upper surfacecooling plate 111 and the lower surface cooling plate 112 may cool thesubstrate G with the plates 111 and 112 keeping in touch with thesubstrate G.

Although the upper surface cooling plate 111 has the plate body 115 madeof a porous material and a configuration to blow the cooling gas in theabove embodiment, the lower surface cooling plate 112, in place of theupper surface cooling plate 111, may have a plate body made of a porousmaterial and a configuration to blow the cooling gas. This allows thecooling gas to be uniformly sprayed to the rear surface of the substrateG to cool efficiently and uniformly the rear surface of the substrate G.Further, both of the upper surface cooling plate 111 and the lowersurface cooling plate 112 may have a plate body made of a porousmaterial and a configuration to blow the cooling gas.

Furthermore, an electrostatic attraction electrode may be provided onthe surface of the upper surface cooling plate 111 or the lower surfacecooling plate 112 to electrostatically attract the substrate G. FIG. 11shows an example where the lower surface cooling plate having aconfiguration to blow the cooling gas includes an electrostaticattraction electrode. In FIG. 11, a lower surface cooling plate 190comprises a permeable plate body 191 made of a porous material and acooling gas supply path 192 for supplying the cooling gas to the platebody 191. The plate body 191 is configured, similarly to the plate body115, such that a gap 191 c with a substantially uniform width andextending in a substantially horizontal direction is formed between anupper plate 191 a and a lower plate 191 b. The lower surface of theupper plate 191 a is provided with a plurality of grooves 191 d whichare recessed upward in a hollow shape. The cooling gas supply path 192is constituted of the internal space of a supply pipe 193 connected tothe gap 191 c, the gap 191 c, and the grooves 191 d. The upper surfaceof the plate body 191 is formed with a permeable protection film 201,and the lower surface and the outer side surface of the plate body 191are covered with a non-permeable protection material 202. Further, thepermeable protection film 201 incorporates an electrostatic attractionelectrode 203 made of a conductor in a thin layer shape. Theelectrostatic attraction electrode 203 is permeable and is entirelycovered with the permeable protection film 201 for protection. As thematerial of the permeable protection film 201 in this case, aninsulating material is used, for example, ceramics such as alumina andthe like. The electrostatic attraction electrode 203 is also connectedto a direct-current power supply 205 provided outside the chamber 101.Note that the electrostatic attraction electrode 203 may also be formedby thermal spraying. For example, thermal spraying can be performed ontothe surface of the plate body 191 in the order of the permeableprotection film 201, the electrostatic attraction electrode 203, and thepermeable protection film 201 into a layered form. In thisconfiguration, the substrate G is attracted to the surface of thepermeable protection film 201 by an electrostatic force generated on thesurface of the permeable protection film 201 on the upper surface of thelower surface cooling plate 190. Accordingly, the substrate G is surelyheld in a state in which the substrate G is in close contact with thelower surface cooling plate 190. Besides, the cooling gas is supplied tothe entire lower surface of the substrate G after passing through theplate body 191, the permeable protection film 201, the electrostaticattraction electrode 203, and the permeable protection film 201 inorder. This can cool the substrate G efficiently and uniformly. Notethat the lower surface cooling plate 190 may be configured, similarly tothe upper surface cooling plate 111 shown in FIG. 10, such that, forexample, a cooling water conveyance pipe for conveying a cooling wateris provided in the plate body 191 so that the plate body 191 and the gaspassing through the plate body 191 can be cooled by the cooling waterconveyance pipe.

The processing system is not limited to the multi-chamber type includinga plurality of substrate processing apparatuses. Although the processingsystem 1 in which the plasma CVD processing is performed in theprocessing section 3 has been described in the above embodiment, theprocessing performed in the processing section may be other processing.The present invention is also applicable to a processing systemperforming, in the processing section, other processing performed in areduced-pressure atmosphere, for example, thermal CVD processing,etching processing, ashing processing, and so on. Further, although thecase in which the substrate G for LCD is processed has been described inthe above embodiment, the substrate may be other one, for example, asemiconductor wafer or the like.

1. A load lock apparatus including a carry port provided on a side of acarry-in/out section for carrying a substrate in/out from/to theoutside, and a carry port provided on a side of a processing section forprocessing the substrate, said apparatus comprising: a first temperaturecontrolling plate for controlling a temperature of the substrate carriedin said load lock apparatus; and a second temperature controlling plate,wherein said first temperature controlling plate is placed on a frontsurface side of the substrate and said second temperature controllingplate is placed on a rear surface side of the substrate, wherein each ofsaid first temperature controlling plate and said second temperaturecontrolling plate comprises a plate body made of a porous carbon and atemperature controlling gas supply path for supplying a temperaturecontrolling gas controlled in temperature to said plate body, wherein asurface of said plate body is provided with a permeable protection film,wherein the temperature controlling gas passes through said plate body,blows out from the surface of said plate body, and is supplied to thesubstrate, wherein an upper surface and an outer side surface of saidplate body of said first temperature controlling plate are covered witha non-permeable protection material, and wherein said non-permeableprotection material extending to a point below a lower surface of saidplate body and said permeable protection film.
 2. The load lockapparatus as set forth in claim 1, wherein said first temperaturecontrolling plate and/or said second temperature controlling plateare/is capable of being relatively brought close to or away from thesubstrate.
 3. The load lock apparatus as set forth in claim 1, whereinsaid second temperature controlling plate is provided with anelectrostatic attraction electrode for electrostatically attracting thesubstrate.
 4. A load lock apparatus including a carry port provided on aside of a carry-in/out section for carrying a substrate in/out from/tothe outside, and a carry port provided on a side of a processing sectionfor processing the substrate, said apparatus comprising: a firsttemperature controlling plate for controlling a temperature of thesubstrate carried in said load lock apparatus; and a second temperaturecontrolling plate, wherein said first temperature controlling plate isplaced on a front surface side of the substrate and said secondtemperature controlling plate is placed on a rear surface side of thesubstrate, wherein each of said first temperature controlling plate andsaid second temperature controlling plate comprises a plate body made ofa porous carbon, a temperature controller provided in said plate body,and a gas supply path for supplying a gas to said plate body, wherein asurface of said plate body is provided with a permeable protection film,wherein the gas is controlled in temperature when passing through saidplate body temperature-controlled by said temperature controller, blowsout from the surface of said plate body, and is supplied to thesubstrate, wherein an upper surface and an outer side surface of saidplate body of said first temperature controlling plate are covered witha non-permeable protection material, and wherein said non-permeableprotection material extending to a point below a lower surface of saidplate body and said permeable protection film.
 5. The load lockapparatus as set forth in claim 4, wherein said first temperaturecontrolling plate and/or said second temperature controlling plateare/is capable of being relatively brought close to or away from thesubstrate.
 6. The load lock apparatus as set forth in claim 4, whereinsaid second temperature controlling plate is provided with anelectrostatic attraction electrode for electrostatically attracting thesubstrate.
 7. A substrate processing system comprising a processingsection for processing a substrate; a carry-in/out section for carryingthe substrate in/out; and a load lock section provided between saidprocessing section and said carry-in/out section, wherein said load locksection comprises a first load lock apparatus including a carry portprovided on a side of said carry-in/out section for carrying thesubstrate in/out from/to the outside, and a carry port provided on aside of said processing section for processing the substrate; and asecond load lock apparatus including a carry port provided on a side ofsaid carry-in/out section for carrying the substrate in/out from/to theoutside, and a carry port provided on a side of said processing sectionfor processing the substrate, each of said first load lock apparatus andsaid second load lock apparatus comprising a first temperaturecontrolling plate for controlling a temperature of the substrate carriedin said load lock apparatus, and comprising a second temperaturecontrolling plate, wherein said first temperature controlling plate isplaced on a front surface side of the substrate and said secondtemperature controlling plate is placed on a rear surface side of thesubstrate, wherein each of said first temperature controlling plate andsaid second temperature controlling plate comprises a plate body made ofa porous carbon and a temperature controlling gas supply path forsupplying a temperature controlling gas controlled in temperature tosaid plate body, wherein a surface of said plate body is provided with apermeable protection film, wherein the temperature controlling gaspasses through said plate body, blows out from a surface of said platebody, and is supplied to the substrate, wherein an upper surface and anouter side surface of said plate body of said first temperaturecontrolling plate are covered with a non-permeable protection material,and wherein said non-permeable protection material extending to a pointbelow a lower surface of said plate body and said permeable protectionfilm.
 8. The substrate processing system as set forth in claim 7,wherein said load lock section comprises said first load lock apparatusand said second load lock apparatus stacked one on the other.
 9. Asubstrate processing system comprising a processing section forprocessing a substrate; a carry-in/out section for carrying thesubstrate in/out; and a load lock section provided between saidprocessing section and said carry-in/out section, wherein said load locksection comprises a first load lock apparatus including a carry portprovided on a side of said carry-in/out section for carrying thesubstrate in/out from/to the outside, and a carry port provided on aside of said processing section for processing the substrate; and asecond load lock apparatus including a carry port provided on a side ofsaid carry-in/out section for carrying the substrate in/out from/to theoutside, and a carry port provided on a side of said processing sectionfor processing the substrate, each of said first load lock apparatus andsaid second load lock apparatus comprising a first temperaturecontrolling plate for controlling a temperature of the substrate carriedin said load lock apparatus, and comprising a second temperaturecontrolling plate, wherein said first temperature controlling plate isplaced on a front side of the substrate and said second temperaturecontrolling plate is placed on a rear side of the substrate, whereineach of said first temperature controlling plate and said secondtemperature controlling plate of said first load lock apparatuscomprises a first plate body made of a porous carbon and a firsttemperature controlling gas supply path for supplying a temperaturecontrolling gas controlled in temperature to said first plate body, asurface of said first plate body being provided with a permeableprotection film, the temperature controlling gas passing through saidfirst plate body, blowing out from a surface of said first plate body,and being supplied to the substrate, wherein each of said firsttemperature controlling plate and said second temperature controllingplate of said second load lock apparatus comprises a second plate bodymade of porous carbon, a second temperature controller provided in saidsecond plate body, and a second gas supply path for supplying a gas tosaid second plate body, a surface of said second plate body beingprovided with a permeable protection film, the gas being controlled intemperature when passing through said second plate bodytemperature-controlled by said second temperature controller, blowingout from the surface of said second plate body, and being supplied tothe substrate, wherein an upper surface and an outer side surface ofsaid plate body of said first temperature controlling plate are coveredwith a non-permeable protection material, and wherein said non-permeableprotection material extends to a point below a lower surface of saidplate body and said permeable protection film.
 10. The substrateprocessing system as set forth in claim 9, wherein said load locksection comprises said first load lock apparatus and said second loadlock apparatus stacked one on the other.
 11. A substrate processingsystem comprising a processing section for processing a substrate; acarry-in/out section for carrying the substrate in/out; and a load locksection provided between said processing section and said carry-in/outsection, wherein said load lock section comprises a first load lockapparatus including a carry port provided on a side of said carry-in/outsection for carrying the substrate in/out from/to the outside, and acarry port provided on a side of said processing section for processingthe substrate; and a second load lock apparatus including a carry portprovided on a side of said carry-in/out section for carrying thesubstrate in/out from/to the outside, and a carry port provided on aside of said processing section for processing the substrate, each ofsaid first load lock apparatus and said second load lock apparatuscomprising a first temperature controlling plate for controlling atemperature of the substrate carried in said load lock apparatus, andcomprising a second temperature controlling plate, wherein said firsttemperature controlling plate is placed on a front surface side of thesubstrate and said second temperature controlling plate is placed on arear surface side of the substrate, wherein each of said firsttemperature controlling plate and said second temperature controllingplate of said first load lock apparatus and said second load lockapparatus comprises a plate body made of a porous carbon, a temperaturecontroller provided in said plate body, and a gas supply path forsupplying a gas to said plate body, wherein the gas is controlled intemperature when passing through said plate body temperature-controlledby said temperature controller, blows out from a surface of said platebody, and is supplied to the substrate, wherein an upper surface and anouter side surface of said plate body of said first temperaturecontrolling plate are covered with a non-permeable protection material,and wherein said non-permeable protection material extending to a pointbelow a lower surface of said plate body and said permeable protectionfilm.
 12. The substrate processing system as set forth in claim 11,wherein said load lock section comprises said first load lock apparatusand said second load lock apparatus stacked one on the other.
 13. Theload lock apparatus as set forth in claim 1, wherein said firsttemperature controlling plate is an upper surface heating plate, andsaid second temperature controlling plate is a lower surface heatingplate.
 14. The load lock apparatus as set forth in claim 1, wherein saidfirst temperature controlling plate is an upper surface cooling plate,and said second temperature controlling plate is a lower surface coolingplate.
 15. The load lock apparatus as set forth in claim 4, wherein saidfirst temperature controlling plate is an upper surface heating plate,and said second temperature controlling plate is a lower surface heatingplate.
 16. The load lock apparatus as set forth in claim 4, wherein saidfirst temperature controlling plate is an upper surface cooling plate,and said second temperature controlling plate is a lower surface coolingplate.
 17. The substrate processing system as set forth in claim 7,wherein said first temperature controlling plate is an upper surfaceheating plate, and said second temperature controlling plate is a lowersurface heating plate.
 18. The substrate processing system as set forthin claim 7, wherein said first temperature controlling plate is an uppersurface cooling plate, and said second temperature controlling plate isa lower surface cooling plate.
 19. The substrate processing system asset forth in claim 9, wherein said first temperature controlling plateis an upper surface heating plate, and said second temperaturecontrolling plate is a lower surface heating plate.
 20. The substrateprocessing system as set forth in claim 9, wherein said firsttemperature controlling plate is an upper surface cooling plate, andsaid second temperature controlling plate is a lower surface coolingplate.
 21. The substrate processing system as set forth in claim 11,wherein said first temperature controlling plate is an upper surfaceheating plate, and said second temperature controlling plate is a lowersurface heating plate.
 22. The substrate processing system as set forthin claim 11, wherein said first temperature controlling plate is anupper surface cooling plate, and said second temperature controllingplate is a lower surface cooling plate.